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dc.contributor.author
Vildosola, Veronica Laura
dc.contributor.author
Güller, Francisco
dc.contributor.author
Llois, Ana Maria
dc.date.available
2019-10-15T19:03:22Z
dc.date.issued
2013-05
dc.identifier.citation
Vildosola, Veronica Laura; Güller, Francisco; Llois, Ana Maria; Mechanism to generate a two-dimensional electron gas at the surface of the charge-ordered semiconductor BaBiO3; American Physical Society; Physical Review Letters; 110; 20; 5-2013; 206805-206810
dc.identifier.issn
0031-9007
dc.identifier.uri
http://hdl.handle.net/11336/85942
dc.description.abstract
In this Letter, we find by means of first-principles calculations a new physical mechanism to generate a two-dimensional electron gas, namely, the breaking of charge ordering at the surface of a charge-ordered semiconductor due to the incomplete oxygen environment of the surface ions. The emergence of the 2D gas is independent of the presence of oxygen vacancies or polar discontinuities; this is a self-doping effect. This mechanism might apply to many charge-ordered systems, in particular, we study the case of BaBiO 3(001). Our calculations show that the outer layer of the Bi-terminated simulated surface turns more cubiclike and metallic while the inner layers remain in the insulating monoclinic state that the system present in the bulk form. On the other hand, the metallization does not occur for the Ba termination, a fact that makes this system appealing for nanostructuring. Finally, in view of the bulk properties of this material under doping, this particular finding sets another possible route for future exploration: the potential scenario of 2D superconductivity at the BaBiO3 surface.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Physical Society
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
2D electron gas
dc.subject
Self doping
dc.subject
Surface metallization
dc.subject.classification
Física de los Materiales Condensados
dc.subject.classification
Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Mechanism to generate a two-dimensional electron gas at the surface of the charge-ordered semiconductor BaBiO3
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2019-10-09T17:56:07Z
dc.journal.volume
110
dc.journal.number
20
dc.journal.pagination
206805-206810
dc.journal.pais
Estados Unidos
dc.journal.ciudad
Nueva York
dc.description.fil
Fil: Vildosola, Veronica Laura. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Güller, Francisco. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Llois, Ana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.journal.title
Physical Review Letters
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1103/PhysRevLett.110.206805
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.110.206805


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