Artículo
Twisted-light-induced optical transitions in semiconductors: Free-carrier quantum kinetics
Fecha de publicación:
09/2010
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We theoretically investigate the interband transitions and quantum kinetics induced by light carrying orbital angular momentum, or twisted light, in bulk semiconductors. We pose the problem in terms of the Heisenberg equations of motion of the electron populations, and interband and intraband coherences. Our theory extends the free-carrier semiconductor Bloch equations to the case of photoexcitation by twisted light. The theory is formulated using cylindrical coordinates, which are better suited to describe the interaction with twisted light than the usual Cartesian coordinates used to study regular optical excitation. We solve the equations of motion in the low excitation regime, and obtain analytical expressions for the coherences and populations; with these, we calculate the orbital angular momentum transferred from the light to the electrons and the paramagnetic and diamagnetic electric current densities. © 2010 The American Physical Society.
Palabras clave:
Twisted Light
,
Semiconductors
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Identificadores
Colecciones
Articulos(IFIBA)
Articulos de INST.DE FISICA DE BUENOS AIRES
Articulos de INST.DE FISICA DE BUENOS AIRES
Citación
Quinteiro, Guillermo Federico; Tamborenea, Pablo Ignacio; Twisted-light-induced optical transitions in semiconductors: Free-carrier quantum kinetics; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 82; 12; 9-2010; 125207-125217
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