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dc.contributor.author
Kellermann, G.
dc.contributor.author
Montoro, L. A.
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Giovanetti, Lisandro Jose
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Dos Santos Claro, Paula Cecilia
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Zhang, L.
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Ramírez, A. J.
dc.contributor.author
Requejo, Felix Gregorio
dc.contributor.author
Craievich, A. F.
dc.date.available
2016-05-03T19:10:09Z
dc.date.issued
2015-01
dc.identifier.citation
Kellermann, G.; Montoro, L. A.; Giovanetti, Lisandro Jose; Dos Santos Claro, Paula Cecilia; Zhang, L.; et al.; Controlled growth of extended arrays of CoSi2 hexagonal nanoplatelets buried in Si(001), Si(011) and Si(111) wafers; Royal Society of Chemistry; Physical Chemistry Chemical Physics; 17; 7; 1-2015; 4945-4951
dc.identifier.issn
1463-9076
dc.identifier.uri
http://hdl.handle.net/11336/5487
dc.description.abstract
Because of their high electrical conductivity CoSi2 nanostructures are potential candidates for preparing ordered nano-arrays to be used as electrode interconnectors and contacts in microelectronic devices. We here describe a controlled procedure for the endotaxial growth of hexagonal CoSi2 nanoplatelets buried in differently oriented single crystalline Si wafers on which a Co-doped SiO2 thin film was previously deposited. These nanomaterials were obtained by a clean procedure consisting of isothermal annealing at 750 °C under a He atmosphere of Co-doped SiO2 thin films deposited onto the surface of three differently oriented flat Si substrates, namely Si(001), Si(011) and Si(111). Buried CoSi2 nanoplatelets are in all cases spontaneously formed as a consequence of the diffusion of Co atoms into the silicon wafer and their reaction with host Si atoms. Our TEM and GISAXS analyses demonstrated that these arrays, irrespective of host Si orientation, consist of CoSi2 hexagonal nanoplatelets in all cases parallel to Si{111} crystallographic planes. Additionally, the dimensions of the nanoplatelets were consistently determined by TEM and GISAXS for the three different host Si single crystal orientations.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Royal Society of Chemistry
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Cosi2 Nanostructures
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Endotaxial Growth
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Co Diffusion
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Nano-materiales
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Nanotecnología
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Controlled growth of extended arrays of CoSi2 hexagonal nanoplatelets buried in Si(001), Si(011) and Si(111) wafers
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2016-05-06 15:52:43.262787-03
dc.journal.volume
17
dc.journal.number
7
dc.journal.pagination
4945-4951
dc.journal.pais
Reino Unido
dc.journal.ciudad
Cambridge
dc.description.fil
Fil: Kellermann, G.. Universidade Federal Do Parana; Brasil
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Fil: Montoro, L. A.. Universidade Federal do Minas Gerais; Brasil
dc.description.fil
Fil: Giovanetti, Lisandro Jose. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico la Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina. Universidad Nacional de La Plata; Argentina
dc.description.fil
Fil: Dos Santos Claro, Paula Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico la Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina. Universidad Nacional de La Plata; Argentina
dc.description.fil
Fil: Zhang, L.. Oklahoma State University; Estados Unidos
dc.description.fil
Fil: Ramírez, A. J.. Brazilian Nanotechnology National Laboratory; Brasil
dc.description.fil
Fil: Requejo, Felix Gregorio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico la Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina. Universidad Nacional de La Plata; Argentina
dc.description.fil
Fil: Craievich, A. F.. Universidade de Sao Paulo; Brasil
dc.journal.title
Physical Chemistry Chemical Physics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://pubs.rsc.org/en/content/articlelanding/2015/cp/c4cp04738a
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1039/c4cp04738a
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