Artículo
Few-electron semiconductor quantum dots with Gaussian confinement
Fecha de publicación:
08/03/2009
Editorial:
De Gruyter
Revista:
Central European Journal of Physics
ISSN:
1895-1082
e-ISSN:
1644-3608
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
Palabras clave:
Quantum Dot
,
Gaussian Potential
,
Electronic Structure
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Articulos(IMIT)
Articulos de INST.DE MODELADO E INNOVACION TECNOLOGICA
Articulos de INST.DE MODELADO E INNOVACION TECNOLOGICA
Citación
Gomez, Sergio Santiago; Romero, Rodolfo Horacio; Few-electron semiconductor quantum dots with Gaussian confinement; De Gruyter; Central European Journal of Physics; 7; 1; 8-3-2009; 12-21
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