Artículo
Surface induced electronic Berry curvature in bulk Berry curvature free materials
Fecha de publicación:
03/2023
Editorial:
Elsevier
Revista:
Materials Today Physics
ISSN:
2542-5293
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
In recent years it has become clear that electronic Berry curvature (BC) is a key concept to understand and predict physical properties of crystalline materials. A wealth of interesting Hall-type responses in charge, spin and heat transport are caused by the BC associated to electronic bands inside a solid: anomalous Hall effects in magnetic materials, and various nonlinear Hall and Nernst effects in non-magnetic systems that lack inversion symmetry. However, for the largest class of known materials –non-magnetic ones with inversion symmetry– electronic BC is strictly zero. Here we show that precisely for these bulk BC-free materials, a finite BC can emerge at their surfaces and interfaces. This immediately activates certain surfaces in producing Hall-type transport responses. We demonstrate this by first principles calculations of the BC at bismuth, mercury-telluride (HgTe) and rhodium surfaces of various symmetries, revealing the presence of a surface Berry curvature dipole and associated quantum nonlinear Hall effects at a number of these. This opens up a plethora of materials to explore and harness the physical effects emerging from the electronic Berry curvature associated exclusively to their boundaries.
Palabras clave:
BERRY
,
SURFACE
,
CURVATURE
,
WEYL
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Identificadores
Colecciones
Articulos (UE-INN - NODO BARILOCHE)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Citación
Wawrzik, Dennis; Facio, Jorge Ismael; van den Brink, Jeroen; Surface induced electronic Berry curvature in bulk Berry curvature free materials; Elsevier; Materials Today Physics; 33; 3-2023; 1-4
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