Artículo
Impurities and electronic localization in graphene bilayers
Fecha de publicación:
28/01/2015
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe nonmagnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field-induced gap is partially filled by strongly localized impurity states. Interestingly, the structure, distribution, and localization length of these states depend on the field polarization.
Palabras clave:
Quantum Transport
,
Graphene
,
Localization
,
Adatoms
Archivos asociados
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Identificadores
Colecciones
Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Ojeda Collado, Hector Pablo; Usaj, Gonzalo; Balseiro, Carlos Antonio; Impurities and electronic localization in graphene bilayers; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 91; 2015; 28-1-2015; 045435-1 / 045435-7
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