Artículo
Exploring the applicability of amorphous films of system In-Sb-Te as phase change materials
Fecha de publicación:
09/2016
Editorial:
Elsevier Science
Revista:
Journal of Non-crystalline Solids
ISSN:
0022-3093
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Hereby, we present In-Sb-Te amorphous films grown by pulsed laser deposition technique using, as targets, crystalline ingots (with corresponding stoichiometry) prepared by traditional melt-quenching method. The explored nominal compositions were In50Sb15Te35, about a ternary compound formed in the quasi-binary InTe-SbTe system, metastable at room temperature, and two eutectics In8Sb8Te84 and In10Sb51Te39. Measurements of electrical sheet resistance evidenced that the amorphous films behave as electrical insulators at room temperature and present a giant jump in resistivity towards a conducting state on crystallization. Differential scanning calorimetry technique complemented the structural information obtained by X-ray diffraction and revealed temperatures of crystallization of the amorphous films as well as their melting points. Due to their temperature characteristics (crystallization temperature ≈ 225 °C and melting temperature ≈ 540 °C), In10Sb51Te39 film results very attractive from technological point of view. These characteristics could make this eutectic composition a good candidate for using in phase-change memory devices.
Palabras clave:
Chalcogenides
,
In-Sb-Te
,
Fhase Change Memory
,
Films
,
Electrical Resistivity
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Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Citación
Bilovol, Vitaliy; Arcondo, Bibiana Graciela; Exploring the applicability of amorphous films of system In-Sb-Te as phase change materials; Elsevier Science; Journal of Non-crystalline Solids; 147; 9-2016; 315-321
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