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dc.contributor.author
Makinistian, Leonardo
dc.contributor.author
Albanesi, Eduardo Aldo
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Gonzalez Lemus, Nasly Vanessa
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Petukhov, A. G.
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Schmidt, D.
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Schubert, E.
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Schubert, M.
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Losovyj, Ya
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Galiy, P.
dc.contributor.author
Dowben, P.
dc.date.available
2017-02-22T19:11:54Z
dc.date.issued
2010-02
dc.identifier.citation
Makinistian, Leonardo; Albanesi, Eduardo Aldo; Gonzalez Lemus, Nasly Vanessa; Petukhov, A. G.; Schmidt, D.; et al.; Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3; American Physical Society; Physical Review B: Condensed Matter And Materials Physics; 81; 7; 2-2010; 752171-752178
dc.identifier.issn
1098-0121
dc.identifier.uri
http://hdl.handle.net/11336/13320
dc.description.abstract
In this work, we present a thorough study of the optical properties of the layered orthorhombic compoundIn4Se3. The dielectric function—real and imaginary parts, the complex refraction index, the reflectivity, theabsorption coefficient, and the conductivity of In4Se3 were calculated with the inclusion of the spin-orbitinteraction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employedfor more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and caxes of orthorhombic absorbing In4Se3 single crystals cut approximately parallel to (100) at photon energiesfrom 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss thelocation and nature of the main optical peaks appearing in the spectra. The obtained optical functions displaya rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a highextension, given the scarce experimental information about its optical properties.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Physical Society
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
71.20.B
dc.subject
78.20.Ci
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71.15.Mb
dc.subject.classification
Física de los Materiales Condensados
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Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2017-02-17T13:27:16Z
dc.journal.volume
81
dc.journal.number
7
dc.journal.pagination
752171-752178
dc.journal.pais
Estados Unidos
dc.journal.ciudad
New York
dc.description.fil
Fil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
dc.description.fil
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
dc.description.fil
Fil: Gonzalez Lemus, Nasly Vanessa. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
dc.description.fil
Fil: Petukhov, A. G.. South Dakota School of Mines; Estados Unidos
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Fil: Schmidt, D.. University Of Nebraska; Estados Unidos
dc.description.fil
Fil: Schubert, E.. University Of Nebraska; Estados Unidos
dc.description.fil
Fil: Schubert, M.. University Of Nebraska; Estados Unidos
dc.description.fil
Fil: Losovyj, Ya. Louisiana State University; Estados Unidos
dc.description.fil
Fil: Galiy, P.. Ivan Franko National University of Lviv; Ucrania
dc.description.fil
Fil: Dowben, P.. University Of Nebraska; Estados Unidos
dc.journal.title
Physical Review B: Condensed Matter And Materials Physics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1103/PhysRevB.81.075217
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prb/abstract/10.1103/PhysRevB.81.075217
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